Co-sputtered Cu/Ti bonded interconnects for 3D integration applications

Hsiao Yu Chen, Sheng Yao Hsu, Kuan-Neng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Investigation of co-sputtered Cu/Ti as bonded interconnects for 3D integration is presented in this paper. The proposed structure has the features of self-formed adhesion layer, Cu as major bonding/conducting material, and potential Ti oxide as sidewall passivation. The excellent electrical performance and high electrical stability against humidity and electro-migration of this structure are achieved.

Original languageEnglish
Title of host publication2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs
StatePublished - 12 Aug 2013
Event2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan
Duration: 22 Apr 201324 Apr 2013

Publication series

Name2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
CountryTaiwan
CityHsinchu
Period22/04/1324/04/13

Keywords

  • 3D integration
  • co-sputtered metal bonding
  • self-formed adhesion layer

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