@inproceedings{f9f52cf61ad842dc8b3f16ade0e3941a,
title = "Co-sputtered Cu/Ti bonded interconnects for 3D integration applications",
abstract = "Investigation of co-sputtered Cu/Ti as bonded interconnects for 3D integration is presented in this paper. The proposed structure has the features of self-formed adhesion layer, Cu as major bonding/conducting material, and potential Ti oxide as sidewall passivation. The excellent electrical performance and high electrical stability against humidity and electro-migration of this structure are achieved.",
keywords = "3D integration, co-sputtered metal bonding, self-formed adhesion layer",
author = "Chen, {Hsiao Yu} and Hsu, {Sheng Yao} and Kuan-Neng Chen",
year = "2013",
month = aug,
day = "12",
doi = "10.1109/VLSI-TSA.2013.6545619",
language = "English",
isbn = "9781467330817",
series = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",
booktitle = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",
note = "null ; Conference date: 22-04-2013 Through 24-04-2013",
}