Co-sputtered Cu/Ti bonded interconnects for 3D integration applications

Hsiao Yu Chen; Sheng Yao Hsu; Kuan-Neng Chen

doi:10.1109/VLSI-TSA.2013.6545619

Co-sputtered Cu/Ti bonded interconnects for 3D integration applications

Hsiao Yu Chen, Sheng Yao Hsu, Kuan-Neng Chen

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Investigation of co-sputtered Cu/Ti as bonded interconnects for 3D integration is presented in this paper. The proposed structure has the features of self-formed adhesion layer, Cu as major bonding/conducting material, and potential Ti oxide as sidewall passivation. The excellent electrical performance and high electrical stability against humidity and electro-migration of this structure are achieved.

Original language	English
Title of host publication	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs	https://doi.org/10.1109/VLSI-TSA.2013.6545619
State	Published - 12 Aug 2013
Event	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan Duration: 22 Apr 2013 → 24 Apr 2013

Publication series

Name	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
Country	Taiwan
City	Hsinchu
Period	22/04/13 → 24/04/13

Keywords

3D integration
co-sputtered metal bonding
self-formed adhesion layer

Access to Document

10.1109/VLSI-TSA.2013.6545619

Link to publication in Scopus

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Cite this

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title = "Co-sputtered Cu/Ti bonded interconnects for 3D integration applications",

abstract = "Investigation of co-sputtered Cu/Ti as bonded interconnects for 3D integration is presented in this paper. The proposed structure has the features of self-formed adhesion layer, Cu as major bonding/conducting material, and potential Ti oxide as sidewall passivation. The excellent electrical performance and high electrical stability against humidity and electro-migration of this structure are achieved.",

keywords = "3D integration, co-sputtered metal bonding, self-formed adhesion layer",

author = "Chen, {Hsiao Yu} and Hsu, {Sheng Yao} and Kuan-Neng Chen",

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series = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

booktitle = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

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Chen, HY, Hsu, SY & Chen, K-N 2013, Co-sputtered Cu/Ti bonded interconnects for 3D integration applications. in 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013., 6545619, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, Hsinchu, Taiwan, 22/04/13. https://doi.org/10.1109/VLSI-TSA.2013.6545619

Co-sputtered Cu/Ti bonded interconnects for 3D integration applications. / Chen, Hsiao Yu; Hsu, Sheng Yao; Chen, Kuan-Neng.

2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. 6545619 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chen, Hsiao Yu

AU - Hsu, Sheng Yao

AU - Chen, Kuan-Neng

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N2 - Investigation of co-sputtered Cu/Ti as bonded interconnects for 3D integration is presented in this paper. The proposed structure has the features of self-formed adhesion layer, Cu as major bonding/conducting material, and potential Ti oxide as sidewall passivation. The excellent electrical performance and high electrical stability against humidity and electro-migration of this structure are achieved.

AB - Investigation of co-sputtered Cu/Ti as bonded interconnects for 3D integration is presented in this paper. The proposed structure has the features of self-formed adhesion layer, Cu as major bonding/conducting material, and potential Ti oxide as sidewall passivation. The excellent electrical performance and high electrical stability against humidity and electro-migration of this structure are achieved.

KW - 3D integration

KW - co-sputtered metal bonding

KW - self-formed adhesion layer

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