Co-integration of GaAlAs/GaAs HBTs and GaAs FETs with a simple, manufacturable process

D. Cheskis, C. E. Chang, W. H. Ku, P. M. Asbeck, M. F. Chang, R. L. Pierson, A. Sailer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

This paper describes a simple approach for the integration of GaAlAs/GaAs HBTs and MESFETs on the same wafer. Our approach is based on using a GaAs layer on top of the HBT emitter region as the FET channel, which is integrated with only a small extension of the standard HBT process. Transconductance reaches 400 mS/mm for 1 mu m gate length devices while ft and fmax are as high as 11 and 13 GHz, respectively.

Original languageEnglish
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages91-94
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - 1 Jan 1992
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: 13 Dec 199216 Dec 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period13/12/9216/12/92

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    Cheskis, D., Chang, C. E., Ku, W. H., Asbeck, P. M., Chang, M. F., Pierson, R. L., & Sailer, A. (1992). Co-integration of GaAlAs/GaAs HBTs and GaAs FETs with a simple, manufacturable process. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 91-94). [307316] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307316