CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications

T. C. Chang*, T. M. Tsai, Po-Tsun Liu, C. W. Chen, S. T. Yan, H. Aoki, Y. C. Chang, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The effect of oxygen plasma treatment on methylsilsesquiazane (MSZ) dielectric was investigated for chemical mechanical planarization (CMP) process. Oxygen plasma treatment was implemented before CMP. Experimental results have shown that the polishing rate of MSZ film with O2 plasma pretreatment is increased as much as two order of magnitude more than that of MSZ without O2 plasma pretreatment. Moreover, the electrical properties of post-CMP MSZ are close to those of an as-cured MSZ. These results indicate that the modified surfaces resulting from O2 plasma treatment increase the polishing rate of MSZ. After polishing, the MSZ film still maintains a low-k quality.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number6
DOIs
StatePublished - 16 Jun 2004

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