This paper investigate the impact of CMOS (complementary metal-oxide-semiconductor) gate microstructure on the reliability and performance of deep-submicronmeter CMOS transistors. The amorphous silicon (α-Si) gate provides better capability to suppress boron penetration in p+ doped gate p-channel MOSFET's, but gate depletion in α-Si gate is slightly more severe than that of the poly-Si gate. The gate-length-dependent gate-depletion effect, in which the difference of linear g m between MOSFET's with two different gate microstructure shows a strong L g-dependence, is reported and interpreted by the impurity diffusion along the grain boundary. Gate nitrogen implant as an effective way to suppress the boron diffusion is also discussed with emphasis on the impact on both device reliability and performance.
|Number of pages||7|
|State||Published - 1 Dec 1997|
|Event||Proceedings of the 1997 IEEE International Integrated Reliability Workshop - Tahoe, CA, USA|
Duration: 13 Oct 1997 → 16 Oct 1997
|Conference||Proceedings of the 1997 IEEE International Integrated Reliability Workshop|
|City||Tahoe, CA, USA|
|Period||13/10/97 → 16/10/97|