Abstract
This paper reports a CMOS terahertz oscillator with a novel frequency selective negative resistance (FSNR) tank to boost its operating frequency. The demonstrated oscillator can operate at a fundamental frequency of about 0.22 THz, exceeding the CMOS device cutoff frequency of ${\rm f} \rm T . The proposed architecture suppresses undesired 2nd and odd harmonics and boosts the fourth-order harmonic (0.87 THz), which radiates through an on-chip patch antenna. The THz oscillator's output spectrum is profiled by using a Michelson interferometer. The oscillator circuit consumes 12 mA from a 1.4 V supply and occupies a 0.045 mm$ 2 die area in a 65 nm CMOS technology.
Original language | English |
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Article number | 6151215 |
Pages (from-to) | 193-202 |
Number of pages | 10 |
Journal | IEEE Transactions on Terahertz Science and Technology |
Volume | 2 |
Issue number | 2 |
DOIs | |
State | Published - 1 Mar 2012 |
Keywords
- CMOS
- interferometer
- oscillator
- resonant tank
- terahertz (THz)