CMOS THz generator with frequency selective negative resistance tank

Qun Jane Gu*, Zhiwei Xu, Heng Yu Jian, Bo Pan, Xiaojing Xu, Mau-Chung Chang, Wei Liu, Harold Fetterman

*Corresponding author for this work

Research output: Contribution to journalArticle

28 Scopus citations

Abstract

This paper reports a CMOS terahertz oscillator with a novel frequency selective negative resistance (FSNR) tank to boost its operating frequency. The demonstrated oscillator can operate at a fundamental frequency of about 0.22 THz, exceeding the CMOS device cutoff frequency of ${\rm f} \rm T . The proposed architecture suppresses undesired 2nd and odd harmonics and boosts the fourth-order harmonic (0.87 THz), which radiates through an on-chip patch antenna. The THz oscillator's output spectrum is profiled by using a Michelson interferometer. The oscillator circuit consumes 12 mA from a 1.4 V supply and occupies a 0.045 mm$ 2 die area in a 65 nm CMOS technology.

Original languageEnglish
Article number6151215
Pages (from-to)193-202
Number of pages10
JournalIEEE Transactions on Terahertz Science and Technology
Volume2
Issue number2
DOIs
StatePublished - 1 Mar 2012

Keywords

  • CMOS
  • interferometer
  • oscillator
  • resonant tank
  • terahertz (THz)

Fingerprint Dive into the research topics of 'CMOS THz generator with frequency selective negative resistance tank'. Together they form a unique fingerprint.

  • Cite this