CMOS THz generator with frequency selective negative resistance tank

Qun Jane Gu; Zhiwei Xu; Heng Yu Jian; Bo Pan; Xiaojing Xu; Mau-Chung Chang; Wei Liu; Harold Fetterman

doi:10.1109/TTHZ.2011.2181922

CMOS THz generator with frequency selective negative resistance tank

Qun Jane Gu^*, Zhiwei Xu, Heng Yu Jian, Bo Pan, Xiaojing Xu, Mau-Chung Chang, Wei Liu, Harold Fetterman

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

This paper reports a CMOS terahertz oscillator with a novel frequency selective negative resistance (FSNR) tank to boost its operating frequency. The demonstrated oscillator can operate at a fundamental frequency of about 0.22 THz, exceeding the CMOS device cutoff frequency of ${\rm f} _{\rm T} . The proposed architecture suppresses undesired 2nd and odd harmonics and boosts the fourth-order harmonic (0.87 THz), which radiates through an on-chip patch antenna. The THz oscillator's output spectrum is profiled by using a Michelson interferometer. The oscillator circuit consumes 12 mA from a 1.4 V supply and occupies a 0.045 mm$ ² die area in a 65 nm CMOS technology.

Original language	English
Article number	6151215
Pages (from-to)	193-202
Number of pages	10
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	2
Issue number	2
DOIs	https://doi.org/10.1109/TTHZ.2011.2181922
State	Published - 1 Mar 2012

Keywords

CMOS
interferometer
oscillator
resonant tank
terahertz (THz)

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10.1109/TTHZ.2011.2181922

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title = "CMOS THz generator with frequency selective negative resistance tank",

abstract = " This paper reports a CMOS terahertz oscillator with a novel frequency selective negative resistance (FSNR) tank to boost its operating frequency. The demonstrated oscillator can operate at a fundamental frequency of about 0.22 THz, exceeding the CMOS device cutoff frequency of ${\rm f} \rm T . The proposed architecture suppresses undesired 2nd and odd harmonics and boosts the fourth-order harmonic (0.87 THz), which radiates through an on-chip patch antenna. The THz oscillator's output spectrum is profiled by using a Michelson interferometer. The oscillator circuit consumes 12 mA from a 1.4 V supply and occupies a 0.045 mm$ 2 die area in a 65 nm CMOS technology.",

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AU - Xu, Zhiwei

AU - Jian, Heng Yu

AU - Pan, Bo

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AU - Chang, Mau-Chung

AU - Liu, Wei

AU - Fetterman, Harold

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AB - This paper reports a CMOS terahertz oscillator with a novel frequency selective negative resistance (FSNR) tank to boost its operating frequency. The demonstrated oscillator can operate at a fundamental frequency of about 0.22 THz, exceeding the CMOS device cutoff frequency of ${\rm f} \rm T . The proposed architecture suppresses undesired 2nd and odd harmonics and boosts the fourth-order harmonic (0.87 THz), which radiates through an on-chip patch antenna. The THz oscillator's output spectrum is profiled by using a Michelson interferometer. The oscillator circuit consumes 12 mA from a 1.4 V supply and occupies a 0.045 mm$ 2 die area in a 65 nm CMOS technology.

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