CMOS Technology - Year 2010 and Beyond

Hiroshi Iwai*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

119 Scopus citations

Abstract

MOS large-scale-integration circuits (LSI's), having advanced remarkably during the past 25 years, are expected to continue to progress well into the next century. The progress has been driven by the downsizing of the components in an LSI, such as MOSFET's. However, even before the downsizing of MOSFET's reaches its fundamental limit, the downsizing is expected to encounter severe technological and economic problems at the beginning of next century when the minimum feature size of LSI's is going to shift to 0.1 and sub-0.1 μm. In this paper, the anticipated difficulties and some concepts for 0.1- and sub-0.1-μm LSI's are explained based on the research of the downsizing MOSFET into such a dimension, and a further concept for deep sub-0.1-μm LSI's is described.

Original languageEnglish
Pages (from-to)357-366
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume34
Issue number3
DOIs
StatePublished - 1999

Keywords

  • CMOS
  • Downsizing
  • Future
  • Large-scale integrated circuit
  • Limitation
  • Technology

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