CMOS technology: High performance ALD HfO2-Al2O3laminate MIM capacitors for RF and mixed signal IC applications

Hang Hu, Shi Jin Ding, H. F. Lim, Chunxiang Zhu, M. F. Li, S. J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, Byung Jin Cho, D. S.H. Chan, Subhash C. Ruslagi, M. B. Yu, C. H. Tung, Anyan Du, Doan My, P. D. Foo, Albert Chin, Dim Lee Kwong

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

In this paper, high performance ALD HfO2-Al2O3laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm2from 10 kHz to 20 GHz, low leakage current of 7.45x10-9A/cm2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO2-Al2O3laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

Original languageEnglish
Title of host publicationSelected Semiconductor Research
PublisherImperial College Press
Pages323-326
Number of pages4
ISBN (Electronic)9781848164079
ISBN (Print)9781848164062
DOIs
StatePublished - 1 Jan 2011

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