CMOS RF modeling for GHz communication IC's

Jia Jiunn Ou*, Xiaodong Jin, Ingrid Ma, Chen-Ming Hu, Paul R. Gray

*Corresponding author for this work

Research output: Contribution to journalConference article

78 Scopus citations

Abstract

The BSIM3v3 RF model, which requires only three additional parameters and no modification of existing model source code, has been proposed for accurately predicting CMOS device behavior up to 10 GHz. Both device and circuit level evaluations were conducted and show excellent agreement. The BSIM3v3 RF model is suited for simulating both RF and mixed-signal circuits that can be used to design a highly integrated CMOS communication systems with unified device model and simulator.

Original languageEnglish
Pages (from-to)94-95
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Jan 1998
EventProceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 9 Jun 199811 Jun 1998

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