Abstract
The BSIM3v3 RF model, which requires only three additional parameters and no modification of existing model source code, has been proposed for accurately predicting CMOS device behavior up to 10 GHz. Both device and circuit level evaluations were conducted and show excellent agreement. The BSIM3v3 RF model is suited for simulating both RF and mixed-signal circuits that can be used to design a highly integrated CMOS communication systems with unified device model and simulator.
| Original language | English |
|---|---|
| Pages (from-to) | 94-95 |
| Number of pages | 2 |
| Journal | Digest of Technical Papers - Symposium on VLSI Technology |
| State | Published - 1 Jan 1998 |
| Event | Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 9 Jun 1998 → 11 Jun 1998 |
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Cite this
Ou, J. J., Jin, X., Ma, I., Hu, C-M., & Gray, P. R. (1998). CMOS RF modeling for GHz communication IC's. Digest of Technical Papers - Symposium on VLSI Technology, 94-95.