CMOS RF modeling for GHz communication IC's

Jia Jiunn Ou; Xiaodong Jin; Ingrid Ma; Chen-Ming Hu; Paul R. Gray

doi:10.1109/VLSIT.1998.689213

CMOS RF modeling for GHz communication IC's

Jia Jiunn Ou^*, Xiaodong Jin, Ingrid Ma, Chen-Ming Hu, Paul R. Gray

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

78 Scopus citations

Abstract

The BSIM3v3 RF model, which requires only three additional parameters and no modification of existing model source code, has been proposed for accurately predicting CMOS device behavior up to 10 GHz. Both device and circuit level evaluations were conducted and show excellent agreement. The BSIM3v3 RF model is suited for simulating both RF and mixed-signal circuits that can be used to design a highly integrated CMOS communication systems with unified device model and simulator.

Original language	English
Pages (from-to)	94-95
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.1998.689213
State	Published - 1 Jan 1998
Event	Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 9 Jun 1998 → 11 Jun 1998

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abstract = "The BSIM3v3 RF model, which requires only three additional parameters and no modification of existing model source code, has been proposed for accurately predicting CMOS device behavior up to 10 GHz. Both device and circuit level evaluations were conducted and show excellent agreement. The BSIM3v3 RF model is suited for simulating both RF and mixed-signal circuits that can be used to design a highly integrated CMOS communication systems with unified device model and simulator.",

author = "Ou, {Jia Jiunn} and Xiaodong Jin and Ingrid Ma and Chen-Ming Hu and Gray, {Paul R.}",

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AU - Ou, Jia Jiunn

AU - Jin, Xiaodong

AU - Ma, Ingrid

AU - Hu, Chen-Ming

AU - Gray, Paul R.

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N2 - The BSIM3v3 RF model, which requires only three additional parameters and no modification of existing model source code, has been proposed for accurately predicting CMOS device behavior up to 10 GHz. Both device and circuit level evaluations were conducted and show excellent agreement. The BSIM3v3 RF model is suited for simulating both RF and mixed-signal circuits that can be used to design a highly integrated CMOS communication systems with unified device model and simulator.

AB - The BSIM3v3 RF model, which requires only three additional parameters and no modification of existing model source code, has been proposed for accurately predicting CMOS device behavior up to 10 GHz. Both device and circuit level evaluations were conducted and show excellent agreement. The BSIM3v3 RF model is suited for simulating both RF and mixed-signal circuits that can be used to design a highly integrated CMOS communication systems with unified device model and simulator.

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M3 - Conference article

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CMOS RF modeling for GHz communication IC's

Abstract

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