CMOS-Like Ambipolar Organic/Inorganic TFTs for AMLCD and AMOLED Applications

Yi Hsing Chu, Gao Ming Wu, Chiao Shun Chuang, Wei Kuan Yu, Chen Fang Chung, Han-Ping Shieh, Chi Neng Mo, Chun Huai Li, Mei-Tsao Chiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Air-stable ambipolar thin-film transistors (TFTs) based on double active layer of pentacene / a-IGZO (amorphous In2O3Ga2O3-ZnO) have been fabricated on SiO2/p-Si substrates. The a-IGZO exhibits n-channel behavior, while pentacene presents p-channel characteristics. Most n-type organic materials are easily affected by moisture and oxygen, thus the measurement of ambipolar devices in ambience air is difficult. However, a-IGZO not only has outstanding mobility but also has good stability while being measured in ambient air. In our work, a CMOS-like inverter was constructed by using two identical ambipolar transistors and the voltage gain up to 70 was obtained. The inverter can be operated in both the first and the third quadrants simplifying circuit design for AMFPD applications.
Original languageEnglish
Title of host publication47th Annual Symposium of the Society-for-Information-Display
Pages1112-1114
Number of pages3
StatePublished - 2009

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    Chu, Y. H., Wu, G. M., Chuang, C. S., Yu, W. K., Chung, C. F., Shieh, H-P., Mo, C. N., Li, C. H., & Chiang, M-T. (2009). CMOS-Like Ambipolar Organic/Inorganic TFTs for AMLCD and AMOLED Applications. In 47th Annual Symposium of the Society-for-Information-Display (pp. 1112-1114)