CMOS K-Band LNAs design counting both interconnect transmission line and RF pad parasitics

Kyung Wan Yu*, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to conferencePaper

12 Scopus citations

Abstract

We have successfully demonstrated K-Band low-noise amplifiers (LNAs) in 0.18μm standard CMOS process and validated their performance at the specified frequencies of 24GHz and 26GHz. The impact of the interconnect line and RF pad parasitics on the frequency characteristics is investigated. The measured LNA performance agrees well with simulated one, as the parasitic effects are well taken into account. The 24GHz LNA obtains a 12.9dB gain and a 5.6dB noise figure (NF). The 26GHz LNA achieves an 8.9dB gain with a 6.9dB NF. The input referred third-order intercept point (IIP3) is measured to be higher than +2dBm for both LNAs. Each LNA consumes 30mA of dc current from a 1.8V power supply.

Original languageEnglish
Pages101-104
Number of pages4
StatePublished - 20 Sep 2004
EventDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States
Duration: 6 Jun 20048 Jun 2004

Conference

ConferenceDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CityFort Worth, TX
Period6/06/048/06/04

Keywords

  • Amplifiers
  • CMOS integrated circuits
  • Electromagnetic analysis
  • Mmics
  • Transmission lines

Fingerprint Dive into the research topics of 'CMOS K-Band LNAs design counting both interconnect transmission line and RF pad parasitics'. Together they form a unique fingerprint.

  • Cite this

    Yu, K. W., & Chang, M-C. (2004). CMOS K-Band LNAs design counting both interconnect transmission line and RF pad parasitics. 101-104. Paper presented at Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Fort Worth, TX, United States.