CMOS-compatible generation of self-organized 3-D Ge quantum dot array for photonic and thermoelectric applications

Ching Chi Wang; Kuan Hung Chen; Inn Hao Chen; Wei Ting Lai; Hung Tai Chang; Wen Yen Chen; Jung Chao Hsu; Shen Wei Lee; Tzu Min Hsu; Ming Tsung Hung; Pei-Wen Li

doi:10.1109/TNANO.2012.2202124

CMOS-compatible generation of self-organized 3-D Ge quantum dot array for photonic and thermoelectric applications

Ching Chi Wang^*, Kuan Hung Chen, Inn Hao Chen, Wei Ting Lai, Hung Tai Chang, Wen Yen Chen, Jung Chao Hsu, Shen Wei Lee, Tzu Min Hsu, Ming Tsung Hung, Pei-Wen Li

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We demonstrate a CMOS-compatible scheme, selective oxidation of SiGe pillars, for creating well-organized 3-D Ge quantum dot (QD) array by guiding QDs migration along the oxidation path and thus placing them on targeted locations where the ultimate oxidation occurs. Stacked QDs exhibit tunable luminescence over the visible and possess low thermal conductivity, showing promise for nanophotonic and energy conversion devices.

Original language	English
Article number	6210389
Pages (from-to)	657-660
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	11
Issue number	4
DOIs	https://doi.org/10.1109/TNANO.2012.2202124
State	Published - 17 Jul 2012

Keywords

Ge quantum dot (QD)
photonics
thermoelectrics (TE)

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Wang, Ching Chi ; Chen, Kuan Hung ; Chen, Inn Hao ; Lai, Wei Ting ; Chang, Hung Tai ; Chen, Wen Yen ; Hsu, Jung Chao ; Lee, Shen Wei ; Hsu, Tzu Min ; Hung, Ming Tsung ; Li, Pei-Wen. / CMOS-compatible generation of self-organized 3-D Ge quantum dot array for photonic and thermoelectric applications. In: IEEE Transactions on Nanotechnology. 2012 ; Vol. 11, No. 4. pp. 657-660.

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abstract = "We demonstrate a CMOS-compatible scheme, selective oxidation of SiGe pillars, for creating well-organized 3-D Ge quantum dot (QD) array by guiding QDs migration along the oxidation path and thus placing them on targeted locations where the ultimate oxidation occurs. Stacked QDs exhibit tunable luminescence over the visible and possess low thermal conductivity, showing promise for nanophotonic and energy conversion devices.",

keywords = "Ge quantum dot (QD), photonics, thermoelectrics (TE)",

author = "Wang, {Ching Chi} and Chen, {Kuan Hung} and Chen, {Inn Hao} and Lai, {Wei Ting} and Chang, {Hung Tai} and Chen, {Wen Yen} and Hsu, {Jung Chao} and Lee, {Shen Wei} and Hsu, {Tzu Min} and Hung, {Ming Tsung} and Pei-Wen Li",

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doi = "10.1109/TNANO.2012.2202124",

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CMOS-compatible generation of self-organized 3-D Ge quantum dot array for photonic and thermoelectric applications. / Wang, Ching Chi; Chen, Kuan Hung; Chen, Inn Hao; Lai, Wei Ting; Chang, Hung Tai; Chen, Wen Yen; Hsu, Jung Chao; Lee, Shen Wei; Hsu, Tzu Min; Hung, Ming Tsung; Li, Pei-Wen.

In: IEEE Transactions on Nanotechnology, Vol. 11, No. 4, 6210389, 17.07.2012, p. 657-660.

Research output: Contribution to journal › Article › peer-review

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AU - Wang, Ching Chi

AU - Chen, Kuan Hung

AU - Chen, Inn Hao

AU - Lai, Wei Ting

AU - Chang, Hung Tai

AU - Chen, Wen Yen

AU - Hsu, Jung Chao

AU - Lee, Shen Wei

AU - Hsu, Tzu Min

AU - Hung, Ming Tsung

AU - Li, Pei-Wen

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