Precise control on quantum dot (QD) number and tunnel path in a self-organized manner is crucial for effective single electron tunneling. We experimentally demonstrated a single Ge QD (∼10 nm) self-aligned with nickel-silicide electrodes via Si3N4/SiO2 tunnel barriers by thermally oxidizing a SiGe nanorod. The fabricated Ge QD single hole transistor (SHT) features with clear differential conductance and Coulomb-blockade oscillation behaviors at near room temperature.
|Title of host publication||2010 Silicon Nanoelectronics Workshop, SNW 2010|
|State||Published - 22 Oct 2010|
|Event||2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States|
Duration: 13 Jun 2010 → 14 Jun 2010
|Name||2010 Silicon Nanoelectronics Workshop, SNW 2010|
|Conference||2010 15th Silicon Nanoelectronics Workshop, SNW 2010|
|Period||13/06/10 → 14/06/10|