CMOS-compatible fabrication of room-temperature Ge QD single hole transistors

I. H. Chen, K. H. Chen, H. H. Chou, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Precise control on quantum dot (QD) number and tunnel path in a self-organized manner is crucial for effective single electron tunneling. We experimentally demonstrated a single Ge QD (∼10 nm) self-aligned with nickel-silicide electrodes via Si3N4/SiO2 tunnel barriers by thermally oxidizing a SiGe nanorod. The fabricated Ge QD single hole transistor (SHT) features with clear differential conductance and Coulomb-blockade oscillation behaviors at near room temperature.

Original languageEnglish
Title of host publication2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
StatePublished - 22 Oct 2010
Event2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
Duration: 13 Jun 201014 Jun 2010

Publication series

Name2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference2010 15th Silicon Nanoelectronics Workshop, SNW 2010
CountryUnited States
CityHonolulu, HI
Period13/06/1014/06/10

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