CMOS 0.18 μm standard process capacitive MEMS high-Q oscillator with ultra low-power TIA readout system

F. Y. Kuo, C. F. Chang, Kuei-Ann Wen

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69μW MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.

Original languageEnglish
Article number6985149
Pages (from-to)911-914
Number of pages4
JournalProceedings of IEEE Sensors
Volume2014-December
Issue numberDecember
DOIs
StatePublished - 12 Dec 2014
Event13th IEEE SENSORS Conference, SENSORS 2014 - Valencia, Spain
Duration: 2 Nov 20145 Nov 2014

Keywords

  • CMOS MEMS
  • Real time clock
  • Silicon resonator
  • SoC
  • Trans-impedance amplifier

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