Circuit reliability simulator--Oxide breakdown module

Elyse Rosenbaum*, Peter M. Lee, Reza Moazzami, P. K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

18 Scopus citations

Abstract

A computer program which generates statistics about circuit failures due to MOS oxide breakdown has been developed. The program, CORS (Circuit Oxide Reliability Simulator), predicts the probability of circuit failure as a function of operating time, temperature, power supply voltage, and input waveforms. It consists of a preprocessor and postprocessor for SPICE. CORS calculates the probability of failure by using the node voltages provided by SPICE and oxide defect statistics provided by the user. The effect of burn-in on oxide reliability can also be simulated. CORS is linked to a hot electron and an electromigration reliability simulator. Simulation results are presented.

Original languageEnglish
Pages (from-to)331-334
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1989
Event1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
Duration: 3 Dec 19896 Dec 1989

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