Circuit Reliability Simulator for Interconnect, Via, and Contact Electromigration

Boon Khin Liew, Peng Fang, Nathan W. Cheung, Chen-Ming Hu

Research output: Contribution to journalArticle

28 Scopus citations


A model for predicting Al interconnect and inter-metallic contact/via electromigration time-to-failure under arbitrary current waveform is incorporated in a circuit electromigration reliability simulator. The simulator can 1) generate layout advisory for width and length of each interconnect, and the number of contacts and vias at each node in a circuit and 2) estimate the overall circuit electromigration failure rate and/or cumulative percent failure as functions of time, temperature, voltage, frequency, and previous stress (e.g., burn-in).

Original languageEnglish
Pages (from-to)2472-2479
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - 1 Jan 1992

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