circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm cmos process

Jung Sheng Chen*, Ming-Dou Ker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

The effect of gate-oxide reliability on MOS switch in the bootstrapped circuit is investigated with the sample-and-hold amplifier in a 130-nm CMOS process. After overstress on the MOS switch of sample-and-hold amplifier, the circuit performances in the frequency domain are measured to verify the impact of gate-oxide reliability on circuit performance.

Original languageEnglish
Title of host publication2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages705-706
Number of pages2
DOIs
StatePublished - 1 Dec 2006
Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States
Duration: 26 Mar 200630 Mar 2006

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
CountryUnited States
CitySan Jose, CA
Period26/03/0630/03/06

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