@inproceedings{93fa325200f64897a0a880aba05b266b,
title = "circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm cmos process",
abstract = "The effect of gate-oxide reliability on MOS switch in the bootstrapped circuit is investigated with the sample-and-hold amplifier in a 130-nm CMOS process. After overstress on the MOS switch of sample-and-hold amplifier, the circuit performances in the frequency domain are measured to verify the impact of gate-oxide reliability on circuit performance.",
author = "Chen, {Jung Sheng} and Ming-Dou Ker",
year = "2006",
month = dec,
day = "1",
doi = "10.1109/RELPHY.2006.251334",
language = "English",
isbn = "0780394992",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "705--706",
booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",
note = "null ; Conference date: 26-03-2006 Through 30-03-2006",
}