Circuit demonstrations in a GaAs BiFET technology

P. J. Zampardi*, S. M. Beccue, J. Yu, K. Pedrotti, R. L. Pierson, W. J. Ho, Mau-Chung Chang, K. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


In this paper, wer present several circuits demonstrating the versatility of our GaAs BiFET technology. Among the circuits presented here are a 360 ps access time SRAM, a 2 GHz 2-bit single-chip DRFM, a reduced power laser driver at 1.5 GHz, and an OEIC suitable for 4 Gb/s systems. This technology will have a significant impact on many areas of circuit research such as delta-sigma analog to digital convertors and mixed-mode applications.

Original languageEnglish
Pages (from-to)1723-1726
Number of pages4
JournalSolid State Electronics
Issue number9
StatePublished - 1 Jan 1995


  • BiFET
  • GaAs
  • laser driver
  • OEIC
  • systems

Fingerprint Dive into the research topics of 'Circuit demonstrations in a GaAs BiFET technology'. Together they form a unique fingerprint.

Cite this