Circuit demonstrations in a GaAs BiFET technology

P. J. Zampardi*, S. M. Beccue, J. Yu, K. Pedrotti, R. L. Pierson, W. J. Ho, Mau-Chung Chang, K. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

In this paper, wer present several circuits demonstrating the versatility of our GaAs BiFET technology. Among the circuits presented here are a 360 ps access time SRAM, a 2 GHz 2-bit single-chip DRFM, a reduced power laser driver at 1.5 GHz, and an OEIC suitable for 4 Gb/s systems. This technology will have a significant impact on many areas of circuit research such as delta-sigma analog to digital convertors and mixed-mode applications.

Original languageEnglish
Pages (from-to)1723-1726
Number of pages4
JournalSolid State Electronics
Volume38
Issue number9
DOIs
StatePublished - 1 Jan 1995

Keywords

  • BiFET
  • GaAs
  • laser driver
  • OEIC
  • systems

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    Zampardi, P. J., Beccue, S. M., Yu, J., Pedrotti, K., Pierson, R. L., Ho, W. J., Chang, M-C., & Wang, K. C. (1995). Circuit demonstrations in a GaAs BiFET technology. Solid State Electronics, 38(9), 1723-1726. https://doi.org/10.1016/0038-1101(95)00039-V