Circuit aging simulator (CAS)

Peter M. Lee*, Mary M. Kuo, Koichi Seki, P. K. Lo, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

53 Scopus citations

Abstract

A circuit aging simulator (CAS) has been developed as part of the BSIM (Berkeley Short-channel Igfet Model) family to predict the effects of hot-electron degradation on MOS circuit behavior. Using the SPICE2 or SPICE 3 circuit simulator in a UNIX environment, CAS simulates circuit behavior at a user-specified future time using fresh and DC prestressed BSIM parameter process files. CAS is configured in a pre- and postprocessor configuration, so that no modifications to the SPICE code are necessary. Iterative simulation to take into account ongoing degradation can also be done through an accompanying UNIX shell script program.

Original languageEnglish
Pages (from-to)134-137
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1988
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: 11 Dec 198814 Dec 1988

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