Circuit aging simulator (CAS)

Peter M. Lee; Mary M. Kuo; Koichi Seki; P. K. Lo; Chen-Ming Hu

doi:10.1109/IEDM.1988.32771

Circuit aging simulator (CAS)

Peter M. Lee^*, Mary M. Kuo, Koichi Seki, P. K. Lo, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

53 Scopus citations

Abstract

A circuit aging simulator (CAS) has been developed as part of the BSIM (Berkeley Short-channel Igfet Model) family to predict the effects of hot-electron degradation on MOS circuit behavior. Using the SPICE2 or SPICE 3 circuit simulator in a UNIX environment, CAS simulates circuit behavior at a user-specified future time using fresh and DC prestressed BSIM parameter process files. CAS is configured in a pre- and postprocessor configuration, so that no modifications to the SPICE code are necessary. Iterative simulation to take into account ongoing degradation can also be done through an accompanying UNIX shell script program.

Original language	English
Pages (from-to)	134-137
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1988.32771
State	Published - 1 Dec 1988
Event	Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA Duration: 11 Dec 1988 → 14 Dec 1988

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title = "Circuit aging simulator (CAS)",

abstract = "A circuit aging simulator (CAS) has been developed as part of the BSIM (Berkeley Short-channel Igfet Model) family to predict the effects of hot-electron degradation on MOS circuit behavior. Using the SPICE2 or SPICE 3 circuit simulator in a UNIX environment, CAS simulates circuit behavior at a user-specified future time using fresh and DC prestressed BSIM parameter process files. CAS is configured in a pre- and postprocessor configuration, so that no modifications to the SPICE code are necessary. Iterative simulation to take into account ongoing degradation can also be done through an accompanying UNIX shell script program.",

author = "Lee, {Peter M.} and Kuo, {Mary M.} and Koichi Seki and Lo, {P. K.} and Chen-Ming Hu",

year = "1988",

month = dec,

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doi = "10.1109/IEDM.1988.32771",

language = "English",

pages = "134--137",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 11-12-1988 Through 14-12-1988",

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T1 - Circuit aging simulator (CAS)

AU - Lee, Peter M.

AU - Kuo, Mary M.

AU - Seki, Koichi

AU - Lo, P. K.

AU - Hu, Chen-Ming

PY - 1988/12/1

Y1 - 1988/12/1

N2 - A circuit aging simulator (CAS) has been developed as part of the BSIM (Berkeley Short-channel Igfet Model) family to predict the effects of hot-electron degradation on MOS circuit behavior. Using the SPICE2 or SPICE 3 circuit simulator in a UNIX environment, CAS simulates circuit behavior at a user-specified future time using fresh and DC prestressed BSIM parameter process files. CAS is configured in a pre- and postprocessor configuration, so that no modifications to the SPICE code are necessary. Iterative simulation to take into account ongoing degradation can also be done through an accompanying UNIX shell script program.

AB - A circuit aging simulator (CAS) has been developed as part of the BSIM (Berkeley Short-channel Igfet Model) family to predict the effects of hot-electron degradation on MOS circuit behavior. Using the SPICE2 or SPICE 3 circuit simulator in a UNIX environment, CAS simulates circuit behavior at a user-specified future time using fresh and DC prestressed BSIM parameter process files. CAS is configured in a pre- and postprocessor configuration, so that no modifications to the SPICE code are necessary. Iterative simulation to take into account ongoing degradation can also be done through an accompanying UNIX shell script program.

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U2 - 10.1109/IEDM.1988.32771

DO - 10.1109/IEDM.1988.32771

M3 - Conference article

AN - SCOPUS:0024170237

SP - 134

EP - 137

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 11 December 1988 through 14 December 1988

ER -