Choosing objective functions for inverse lithography patterning

Jue Chin Yu*, Peichen Yu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Inverse lithography which generates model-based patterns theoretically has superior patterning fidelity comparing to conventional rule-based technique. Cost functions are the determinant of performance inverse lithography that is also an optimization problem. However, the design and know-how of cost functions have rarely been discussed. In this paper, we investigate the impacts of various cost functions and their superposition for inverse lithography patterning exploiting a steepest descent algorithm. We research the most generally used objective functions, which are the resist and aerial images, and also deliver a derivation for the aerial image contrast. We then discuss the pattern fidelity and final mask characteristics for simple layouts with a single isolated contact and two nested contacts. Moreover, the convergences which are expressed by edge-placement error (EPE) and contrast versus iteration numbers rapidly attain to steady sate in most hybrid cost functions. All in all, we conclude that a cost function composed of a dominant resist-image component and a minor aerial-image or image-contrast component can carry out a good mask correction and contour targets when using inverse lithography patterning.

Original languageEnglish
Title of host publicationOptical Microlithography XXIV
DOIs
StatePublished - 22 Jun 2011
EventOptical Microlithography XXIV - San Jose, CA, United States
Duration: 1 Mar 20113 Mar 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7973
ISSN (Print)0277-786X

Conference

ConferenceOptical Microlithography XXIV
CountryUnited States
CitySan Jose, CA
Period1/03/113/03/11

Keywords

  • Computational imaging
  • Gradient descent
  • Inverse lithography
  • Microlithography
  • Model-based pattering

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