Chirped multilayer quantum-dot mode-locked lasers with dual-wavelength and ground-state lasing emissions

Yu Chen Chen, Pin Hsien Hsieh, Kuo-Jui Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Monolithic passively mode-locked lasers are investigated based on chirped multilayer InAs/InGaAs quantum-dot (QD) structure. The forward and backward tracings of light-current characteristics show two kinks and two hysteresis loops. The optical spectra reveal two lasing wavelengths around 1273 and 1230 nm, which are identified as two ground-state emissions of two differently chirped QD layers. The corresponding radio-frequency (RF) spectra of high-speed detector reveal two RF peaks at 16.21 and 16.03 GHz, which are attributed to fundamental mode-locking of two respective wavelengths. The laser pulses are confirmed by optical autocorrelator to exhibit dual-wavelength mode-locking. The pulsed characteristics of two lasing wavelengths are also discussed in terms of operating conditions.

Original languageEnglish
Article number016001
Number of pages7
JournalJournal of Nanophotonics
Volume13
Issue number1
DOIs
StatePublished - 1 Jan 2019

Keywords

  • dual-wavelength lasers
  • mode-locked lasers
  • molecular beam epitaxy
  • quantum dots
  • semiconductor lasers
  • LOW-THRESHOLD

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