@inproceedings{283240f1a86e436aaa86a124c0da5876,
title = "Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory",
abstract = "Vt instability caused by random telegraph noise (RTN) in floating gate flash memories beyond 20nm is studied comprehensively. Experiments reveal that the RTN would cause Vt distribution with a kinked tail which re-distributes to a 'Gaussian-like' shape rapidly and was measured by the self-established Budget Product Tester (BPT). A Multi-Times Verify (MTV) algorithm to mitigate the statistical tail, thus enlarging operation window is also exhibited by BPT. In further, a probability model to portray the compact Vt distribution under MTV is proposed. Finally, the impact of MTV on lowering the requirement of Error-correcting code (ECC) bit is also demonstrated.",
author = "Lin, {T. W.} and Ku, {S. H.} and Cheng, {C. H.} and Lee, {C. W.} and Ijen-Huang and Tsai, {Wen Jer} and Lu, {T. C.} and Lu, {W. P.} and Chen, {K. C.} and Ta-Hui Wang and Lu, {Chih Yuan}",
year = "2018",
month = may,
day = "25",
doi = "10.1109/IRPS.2018.8353679",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "PMY.61--PMY.65",
booktitle = "2018 IEEE International Reliability Physics Symposium, IRPS 2018",
address = "United States",
note = "null ; Conference date: 11-03-2018 Through 15-03-2018",
}