Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory

T. W. Lin, S. H. Ku, C. H. Cheng, C. W. Lee, Ijen-Huang, Wen Jer Tsai, T. C. Lu, W. P. Lu, K. C. Chen, Ta-Hui Wang, Chih Yuan Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Vt instability caused by random telegraph noise (RTN) in floating gate flash memories beyond 20nm is studied comprehensively. Experiments reveal that the RTN would cause Vt distribution with a kinked tail which re-distributes to a 'Gaussian-like' shape rapidly and was measured by the self-established Budget Product Tester (BPT). A Multi-Times Verify (MTV) algorithm to mitigate the statistical tail, thus enlarging operation window is also exhibited by BPT. In further, a probability model to portray the compact Vt distribution under MTV is proposed. Finally, the impact of MTV on lowering the requirement of Error-correcting code (ECC) bit is also demonstrated.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesPMY.61-PMY.65
ISBN (Electronic)9781538654798
DOIs
StatePublished - 25 May 2018
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 11 Mar 201815 Mar 2018

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Conference

Conference2018 IEEE International Reliability Physics Symposium, IRPS 2018
CountryUnited States
CityBurlingame
Period11/03/1815/03/18

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    Lin, T. W., Ku, S. H., Cheng, C. H., Lee, C. W., Ijen-Huang, Tsai, W. J., Lu, T. C., Lu, W. P., Chen, K. C., Wang, T-H., & Lu, C. Y. (2018). Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory. In 2018 IEEE International Reliability Physics Symposium, IRPS 2018 (pp. PMY.61-PMY.65). (IEEE International Reliability Physics Symposium Proceedings; Vol. 2018-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2018.8353679