Chimney-shaped and plateau-shaped gate electrode field emission arrays

F. G. Tarntair*, C. C. Wang, W. K. Hong, H. K. Huang, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

A triode structure of chimney-shaped field emitter arrays is proposed in this article. This triode structure includes the chimney-shaped emitter, thermal oxidation dioxide, and the plateau-shaped singlecrystalline silicon gate electrode. For the application of the matrix-addressable and large area flat panel display, the uniform structure of the emitters and the yield become critical manufacturing issues when attempting to control nano-meter size features. The uniformity and yield of the chimney-shaped emitters are very well controlled. The nano-sized gate-to-emitter separations can be created by the changing thickness of the insulator. The uniformity of the insulator and emitter material can be controlled within 3% which can be obtained by most large area thin film deposition tools, not by photolithography.

Original languageEnglish
Pages (from-to)179-184
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume508
DOIs
StatePublished - 1 Dec 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 13 Apr 199815 Apr 1998

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