A triode structure of chimney-shaped field emitter arrays is proposed in this article. This triode structure includes the chimney-shaped emitter, thermal oxidation dioxide, and the plateau-shaped singlecrystalline silicon gate electrode. For the application of the matrix-addressable and large area flat panel display, the uniform structure of the emitters and the yield become critical manufacturing issues when attempting to control nano-meter size features. The uniformity and yield of the chimney-shaped emitters are very well controlled. The nano-sized gate-to-emitter separations can be created by the changing thickness of the insulator. The uniformity of the insulator and emitter material can be controlled within 3% which can be obtained by most large area thin film deposition tools, not by photolithography.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1 Dec 1998|
|Event||Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA|
Duration: 13 Apr 1998 → 15 Apr 1998