Chemical vapour deposition growth of graphene layers on metal substrates

Y. C. Lai*, S. C. Yu, P. M. Rafailov, E. Vlaikova, S. Valkov, S. Petrov, J. Koprinarova, P. Terziyska, V. Marinova, Shiuan-Huei Lin, Pei-Chen Yu, G. C. Chi, D. Dimitrov, M. M. Gospodinov

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

Graphene layers were grown by chemical vapour deposition (CVD) on Si wafers covered by a SiO 2 substrate layer and a Ni interlayer, and on copper and nickel foil. The obtained graphene layers were characterized by Raman spectroscopy. The films grown on SiO 2 /Ni substrate and Ni foil comprise mainly multilayer defect-rich graphene, while those on Cu foil exhibit the spectroscopic fingerprint of relatively defect-free single-layer graphene due to the low carbon solubility in copper and the suitably chosen substrate position in a quasiclosed volume. Optimal growth conditions and the nature of defects in the layers are discussed.

Original languageEnglish
Article number012059
JournalJournal of Physics: Conference Series
Volume558
Issue number1
DOIs
StatePublished - 1 Jan 2014
Event18th International School on Condensed Matter Physics - Challenges of Nanoscale Science: Theory, Materials, Applications, ISCMP 2014 - Varna, Bulgaria
Duration: 1 Sep 20146 Sep 2014

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