Chemical vapor deposition of TiSi nanowires on C54 TiSi2 thin film: An amorphous titanium silicide interlayer assisted nanowire growth

Huang Kai Lin, Hsin An Cheng, Chi Young Lee*, Hsin-Tien Chiu

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

A C54-TiSi2 film was grown on a Si substrate at 1073 K by low pressure chemical vapor deposition (LPCVD) employing titanium subchlorides TiClx(g), generated by reacting between TiCl4(g) and Ti(S) at 1173 K, as the Ti source. Growth of titanium suicide (TiSi) nanowires (NWs; diameter 30-80 nm, length several micrometers) on a C54-TiSi2 film was observed. Growth direction of the NWs was determined to be along the [010] axis. An amorphous titanium suicide interlayer was observed between the NWs and the C54-TiSi2 film. This interlayer, probably existing as a quasi-liquid thin film during the growth, appears to be the key factor to assist the NW development. Field emission properties, turn-on field E0 and field enhancement factor β, of the vertically grown TiSi NWs were determined to be 5.25 V μm-1 and 876, respectively.

Original languageEnglish
Pages (from-to)5388-5396
Number of pages9
JournalChemistry of Materials
Volume21
Issue number22
DOIs
StatePublished - 24 Nov 2009

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