Chemical vapor deposition of tantalum carbide and carbonitride thin films from Me3CE=Ta(CH2CMe3)3 (E = CH, N)

Yu Hsu Chang, Jin Bao Wu, Pei Ju Chang, Hsin-Tien Chiu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Chemical vapor deposition (CVD) of thin films employing Me3CCH=Ta(CH2CMe3)3 and Me3CN=Ta(CH2CMe3)3 as the precursors has been carried out. TaC and TaCN films were deposited at relatively low temperatures (623-923 K). In comparison, using Me3CN=Ta(CH2CMe3)3, the Ta=N bond did not undergo cleavage during the reaction and the N atom was incorporated into the film as nitride. The volatile components evolved were collected and examined by GC-MS, FT-IR, 1H and 13C NMR spectroscopy. Possible decomposition pathways of the tantalum complexes are proposed to rationalize the observation.

Original languageEnglish
Pages (from-to)365-369
Number of pages5
JournalJournal of Materials Chemistry
Volume13
Issue number2
DOIs
StatePublished - 1 Feb 2003

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