Chemical vapor deposition of epitaxial zinc oxide thin films on gallium nitride/sapphire substrates

WC Hou*, BW Lin, Li Chang, TS Lin, CW Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

High-quality ZnO thin films were formed on (0002) oriented GaN/sapphire substrates by chemical vapor deposition (CVD) of Zinc acetylacetonate (Zn(C5H7O2)(2)) and oxygen. The surface morphology and crystallinity of the deposited ZnO thin films have been investigated using atomic force microscopy and X-ray diffraction. Low temperature photoluminescence spectra show that there is a sharp band edge emission positioned at 3.37 eV and the deep level emission is hardly seen. High-resolution transmission electron microscopy in cross section shows that ZnO is directly grown on GaN in epitaxy without any interlayer, and the ZnO/GaN interface remains atomically flat. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.

Original languageEnglish
Title of host publication11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS
EditorsM Munoz, M Tamargo, J Furdyna, H Luo
PublisherWILEY-VCH, INC
Pages856-859
Number of pages4
ISBN (Print)3-527-40510-0
DOIs
StatePublished - 4 Mar 2004
Event11th International Conference on II-VI Compounds - NIAGARA FALLS
Duration: 22 Sep 200326 Sep 2003

Publication series

NamePhysica Status Solidi C-Current Topics in Solid State Physics
PublisherWILEY-VCH, INC
Volume1
ISSN (Print)1862-6351

Conference

Conference11th International Conference on II-VI Compounds
CityNIAGARA FALLS
Period22/09/0326/09/03

Keywords

  • MOLECULAR-BEAM EPITAXY
  • ZNO FILMS
  • HETEROEPITAXIAL GROWTH
  • PLANE SAPPHIRE

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