Chemical lift-off of blue light-emitting diodes grown on sapphire substrate with an oxide-patterned sacrificial layer

Chun Ting Pan, Kun Ching Shen, Dong Sing Wuu*, Hsu Hung Hsueh, Ray-Hua Horng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A high quality GaN epilayer was successfully grown on a sapphire substrate with patterned SiO 2 as a sacrificial structure utilizing the direct heteroepitaxial lateral overgrowth method. The light-emitting diode (LED) structure was subsequently grown on the GaN epilayer and fabricated using a chemical lift-off process. After SiO 2 was removed with a HF solution, the LEDs with Cu substrate could be separated from the sapphire substrate due to an increase in the GaN/sapphire interfacial strain. Similar forward voltage and output power characteristics were obtained for vertical LEDs fabricated using chemical lift-off and laser lift-off processes.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 13
Pages35-37
Number of pages3
Edition7
DOIs
StatePublished - 19 Nov 2012
Event13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number7
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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