@inproceedings{d839a6831c3040cab46ca7868531e3ea,
title = "Chemical lift-off of blue light-emitting diodes grown on sapphire substrate with an oxide-patterned sacrificial layer",
abstract = "A high quality GaN epilayer was successfully grown on a sapphire substrate with patterned SiO 2 as a sacrificial structure utilizing the direct heteroepitaxial lateral overgrowth method. The light-emitting diode (LED) structure was subsequently grown on the GaN epilayer and fabricated using a chemical lift-off process. After SiO 2 was removed with a HF solution, the LEDs with Cu substrate could be separated from the sapphire substrate due to an increase in the GaN/sapphire interfacial strain. Similar forward voltage and output power characteristics were obtained for vertical LEDs fabricated using chemical lift-off and laser lift-off processes.",
author = "Pan, {Chun Ting} and Shen, {Kun Ching} and Wuu, {Dong Sing} and Hsueh, {Hsu Hung} and Ray-Hua Horng",
year = "2012",
month = nov,
day = "19",
doi = "10.1149/1.3701523",
language = "English",
isbn = "9781566779593",
series = "ECS Transactions",
number = "7",
pages = "35--37",
booktitle = "Wide-Bandgap Semiconductor Materials and Devices 13",
edition = "7",
note = "null ; Conference date: 06-05-2012 Through 10-05-2012",
}