Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmas

Pei-Wen Li*, Q. Wang, E. S. Yang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The effects of electron cyclotron resonance (ECR) hydrogen, nitrogen, and ammonia plasma have been studied by x-ray photoelectron spectroscopy. Experimental evidence shows that the ECR hydrogen plasma removes the native oxide on the GaAs surface and recovers the surface order. A mixed nitride-oxide surface layer is formed after nitrogen and ammonia plasma treatments. The appearance of the nitride layer correlates with the passivation of the GaAs surface and the much improved I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors.

Original languageEnglish
Pages (from-to)1996-1998
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number16
DOIs
StatePublished - 1 Dec 1992

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