Interfacial and bulk high-K properties of HfSixOy (20% SiO2) gate dielectrics are discussed with focus on the device performance (i.e., mobility). Samples of this composition were deposited at 2 Torr and 4 Torr and were subjected to various post deposition anneal (PDA) ambients and temperatures. 4 Torr silicates exhibit a higher mobility (peak and high field) than 2 Torr silicates that were subjected to the same post deposition processes. Fixed-amplitude charge pumping (CP) gives low interface state densities for both depositions indicating good interface passivation, whereas variable-amplitude CP shows large trap densities in the bulk of the high-κ layer. Using fast transient measurements and analysis, trapped charge and free-carrier mobility can be extracted allowing characterization of the "trap fee" mobility, which is quite close to the universal electron mobility curve in the high field regime for process conditions of interest.
|Number of pages||13|
|State||Published - 1 Dec 2003|
|Event||Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States|
Duration: 12 Oct 2003 → 16 Oct 2003
|Conference||Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues|
|Period||12/10/03 → 16/10/03|