Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes

Wen Hsien Huang, Jia Min Shieh, Fu-Ming Pan, Chih Chao Yang, Chang Hong Shen, Hsing Hsiang Wang, Tung Ying Hsieh, Ssu Yu Wu, Meng Chyi Wu

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels.

Original languageEnglish
Article number183506
JournalApplied Physics Letters
Volume107
Issue number18
DOIs
StatePublished - 2 Nov 2015

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