Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes

Wen Hsien Huang; Jia Min Shieh; Fu-Ming Pan; Chih Chao Yang; Chang Hong Shen; Hsing Hsiang Wang; Tung Ying Hsieh; Ssu Yu Wu; Meng Chyi Wu

doi:10.1063/1.4935224

Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes

Wen Hsien Huang, Jia Min Shieh, Fu-Ming Pan, Chih Chao Yang, Chang Hong Shen, Hsing Hsiang Wang, Tung Ying Hsieh, Ssu Yu Wu, Meng Chyi Wu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO₂/AlO_xN_y tunnel layer and the SiN_x charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels.

Original language	English
Article number	183506
Journal	Applied Physics Letters
Volume	107
Issue number	18
DOIs	https://doi.org/10.1063/1.4935224
State	Published - 2 Nov 2015

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@article{cd7384e802334d84b66bd6bf363d626d,

title = "Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes",

abstract = "We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels.",

author = "Huang, {Wen Hsien} and Shieh, {Jia Min} and Fu-Ming Pan and Yang, {Chih Chao} and Shen, {Chang Hong} and Wang, {Hsing Hsiang} and Hsieh, {Tung Ying} and Wu, {Ssu Yu} and Wu, {Meng Chyi}",

year = "2015",

month = nov,

day = "2",

doi = "10.1063/1.4935224",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes. / Huang, Wen Hsien; Shieh, Jia Min; Pan, Fu-Ming; Yang, Chih Chao; Shen, Chang Hong; Wang, Hsing Hsiang; Hsieh, Tung Ying; Wu, Ssu Yu; Wu, Meng Chyi.

In: Applied Physics Letters, Vol. 107, No. 18, 183506, 02.11.2015.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes

AU - Huang, Wen Hsien

AU - Shieh, Jia Min

AU - Pan, Fu-Ming

AU - Yang, Chih Chao

AU - Shen, Chang Hong

AU - Wang, Hsing Hsiang

AU - Hsieh, Tung Ying

AU - Wu, Ssu Yu

AU - Wu, Meng Chyi

PY - 2015/11/2

Y1 - 2015/11/2

N2 - We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels.

AB - We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels.

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 183506

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Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes

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