Charge transport in thin hafnium and zirconium oxide films

D. R. Islamov*, V. A. Gritsenko, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The mechanism of charge transport in MIS structures on the basis of thin hafnium and zirconium oxide films is studied. It is shown that transport in the studied materials is limited by phonon assisted tunneling between traps. From the comparison of experimental current-voltage characteristics of MIS structures n-Si/HfO2/Ni and n-Si/ZrO2/Ni, the estimated, thermal, and optical energies of traps are determined. It is shown that oxygen vacancies are localization centers (traps) of charge carriers in HfO2 and ZrO2.

Original languageEnglish
Pages (from-to)184-189
Number of pages6
JournalOptoelectronics, Instrumentation and Data Processing
Volume53
Issue number2
DOIs
StatePublished - 1 Mar 2017

Keywords

  • amorphous films
  • hafnium oxide
  • insulator with high insulator permittivity
  • transport
  • zirconium oxide

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