Charge transport in the normal state of electron- or hole-doped YBa2Cu3O7-x

T. Doderer, C. C. Tsuei, Wei Hwang, D. M. Newns

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

By using a field-effect transistor configuration, we have demonstrated that it is possible to dope electrons or holes into an initially underdoped YBa2Cu3O7-x film at room temperature. The results of systematic measurements of the dual-type transconductance indicate comparable field-effect mobilities for electrons and holes. We propose a model based on band bending and localized electronic states within the band gap of the Mort insulator to explain the dual-type charge transport.

Original languageEnglish
Pages (from-to)5984-5988
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number9
DOIs
StatePublished - 1 Sep 2000

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