Charge Transport and Trapping Characteristics in Thin Nitride-Oxide Stacked Films

K. K. Young, Chen-Ming Hu, William G. Oldham

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

A charge transport and trapping model for thin nitride-oxide stacked films between silicon substrates and polysilicon gates has been proposed. Nitride-oxide stacked films can be thought of as an oxide film with electron trapping at the nitride/oxide interface. The density of electron trapping is determined by the current-continuity requirement. The electron trapping reduces the leakage current and helps to lower the incidence of early failures for nitride-oxide stacked films.

Original languageEnglish
Pages (from-to)616-618
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number11
DOIs
StatePublished - 1 Jan 1988

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