Charge storage characteristics of mo nanocrystal memory influenced by ammonia plasma treatment

Chao Cheng Lin*, Ting Chang Chang, Chun Hao Tu, Wei Ren Chen, Chih Wei Hu, Simon M. Sze, Tseung-Yuen Tseng, Sheng Chi Chen, Jian Yang Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Mo nanocrystal memory was fabricated through annealing the oxygen-incorporated Mo and Si layers. We then investigated the influence an of ammonia plasma treatment on the nonvolatile memory characteristics of a charge storage layer composed of Mo nanocrystal memory embedded in Si Ox. Transmission electron microscopy revealed the nanostructure of the charge storage layer, and X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window reduced, and both retention and endurance improved after the treatment. The reduction in the memory window was attributed to the decrease in charge trapping centers in the surrounding oxide after the treatment. The improvement of retention was interpreted in terms of the nitrogen passivation of traps in the oxide around the Mo nanocrystals. The robust endurance characteristic was attributed to the improvement of the quality of the surrounding oxide by nitrogen passivation.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number9
DOIs
StatePublished - 7 Aug 2009

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