Charge retention loss in a HfO2 dot flash memory via thermally assisted tunneling

Ta-Hui Wang*, H. C. Ma, C. H. Li, M. Lin, Chao-Hsin Chien, T. F. Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The charge loss mechanism in a hafnium oxide (HfO2)dielectric dot flash memory is investigated. We measure the temperature and time dependence of a charge loss induced gate leakage current in a large area cell directly. We find that 1) the charge loss is through a top oxide in the cell and 2) the stored charge emission process exhibits an Arrhenius relationship with temperature, as opposed to linear temperature dependence in a semiconductor-oxide-nitride-oxide-semiconductor flash memory. A thermally activated tunneling front model is proposed to account for the charge loss behavior in a HfO2 dot flash memory.

Original languageEnglish
Pages (from-to)109-110
Number of pages2
JournalIEEE Electron Device Letters
Volume29
Issue number1
DOIs
StatePublished - 1 Jan 2008

Keywords

  • Charge retention loss
  • Hafnium oxide HfO dot flash
  • Thermally activated tunneling

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