Charge quantity influence on resistance switching characteristic during forming process

Tian Jian Chu*, Ting Chang Chang, Tsung Ming Tsai, Hsing Hua Wu, Jung Hui Chen, Kuan Chang Chang, Tai Fa Young, Kai Hsang Chen, Yong En Syu, Geng Wei Chang, Yao Feng Chang, Min Chen Chen, Jyun Hao Lou, Jhih Hong Pan, Jian Yu Chen, Ya-Hsiang Tai, Cong Ye, Hao Wang, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Scopus citations


In this letter, we presented that the charge quantity is the critical factor for forming process. Forming is a pivotal process in resistance random access memory to activate the resistance switching behavior. However, overforming would lead to device damage. In general, the overshoot current has been considered as a degradation reason during the forming process. In this letter, the quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultrafast pulse forming can form a discontinuous conduction path to reduce the operation power.

Original languageEnglish
Article number6473822
Pages (from-to)502-504
Number of pages3
JournalIEEE Electron Device Letters
Issue number4
StatePublished - 11 Mar 2013


  • Forming process
  • hafnium oxide ( HfO)
  • nonvolatile memory
  • resistance switching

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