Charge pumping technique for the evaluation of plasma induced edge damage in shallow S/D extension thin gate oxide NMOSFET's

Steve S. Chung*, S. J. Chen, H. L. Kao, S. J. Luo, Horng-Chih Lin

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Plasma etching of poly-silicon in an MOS device during the gate definition induces the plasma edge damage at the corner of the gate. In this paper, we address the interaction between edge damage, antenna effect and hot carrier degradation and their impact on device reliability. An accurate charge pumping profiling technique has been proposed to characterize the resulting damage. A three-phase edge damage process has been proposed. It is shown that interface trap degradation is the dominant impact of the plasma induced edge damage. The edge damage will enhance the short channel device HC degradation under long-term circuit operation.

Original languageEnglish
Pages (from-to)389-393
Number of pages5
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Jan 2000
Event38th IEEE International Reliability Physics Symposium - San Jose, CA, USA
Duration: 10 Apr 200013 Apr 2000

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