Charge-based core and the model architecture of BSIM5

Jin He, Jane Xi, Mansun Chan, Hui Wan, Mohan Dunga, Babak Heydari, Ali M. Niknejad, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

13 Scopus citations

Abstract

The paper outlines the charge-based core and the architecture of the BSIM5 MOSFET model for sub-100 nm CMOS circuit simulation. The BSIM5 model is a continuous, completely symmetric and accurate non charge-sheet based MOS transistor model derived from the basic device physics, including various physics effects. Comparison of the inversion charge between the BSIM5 prediction and self-consistent numerical solution shows good agreement. The demonstration of fully symmetric characteristics of BSIM5, such as channel current and its high-order derivative in the Gummel symmetry test, and charge and trans-capacitances in a SPICE simulation, also implies BSIM5 is the physically symmetric MOSFET model valid for RF-analog circuit simulations.

Original languageEnglish
Title of host publicationProceedings - 6th International Symposium on Quality Electronic Design, ISQED 2005
Pages96-101
Number of pages6
DOIs
StatePublished - 1 Dec 2005
Event6th International Symposium on Quality Electronic Design, ISQED 2005 - San Jose, CA, United States
Duration: 21 Mar 200523 Mar 2005

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Conference

Conference6th International Symposium on Quality Electronic Design, ISQED 2005
CountryUnited States
CitySan Jose, CA
Period21/03/0523/03/05

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