Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH 3 nitridation and N 2O RTA treatment

Tung Ming Pan*, Tan Fu Lei, Huang Chun Wen, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


In this paper, we developed a new method to grow robust ultrathin oxynitride (E OT = 18 Å) film with effective dielectric constant of 7.15. By NH 3-nitridation of Si substrate, grown ultrathin Si 3N 4 with N 2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.

Original languageEnglish
Pages (from-to)907-912
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number5
StatePublished - 1 May 2001


  • N O
  • NH
  • Nitridation
  • Oxynitride
  • Rapid thermal annealing (RTA)
  • Si N

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