Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate

Yi Siang Shen, Wei Kai Wang, Ray-Hua Horng*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

15 Scopus citations

Abstract

Zinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition and fabricated into metal-oxide-semiconductor field-effect transistors (MOSFETs). The ZnGaO MOSFETs exhibited a complete channel pinch-off of the drain current for VGS < ?4.43 V, high off-state breakdown voltage of 378 V, high ION/IOFF ratio of 106, and low gate leakage current.

Original languageEnglish
Article number7843599
Pages (from-to)112-116
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume5
Issue number2
DOIs
StatePublished - 1 Mar 2017

Keywords

  • Zinc gallate
  • channel pinch-off
  • metal-oxide-semiconductor field-effect transistors (MOSFETs)

Fingerprint Dive into the research topics of 'Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate'. Together they form a unique fingerprint.

Cite this