Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer

Tzu Chun Lu, Min Yung Ke, Sheng Chieh Yang, Yun Wei Cheng, Liang Yi Chen, Guan Jhong Lin, Yu Hsin Lu, Jr Hau He, Hao-Chung Kuo, Jian Jang Huang

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9 Scopus citations

Abstract

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

Original languageEnglish
Pages (from-to)4109-4111
Number of pages3
JournalOptics Letters
Volume35
Issue number24
DOIs
StatePublished - 15 Dec 2010

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    Lu, T. C., Ke, M. Y., Yang, S. C., Cheng, Y. W., Chen, L. Y., Lin, G. J., Lu, Y. H., He, J. H., Kuo, H-C., & Huang, J. J. (2010). Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer. Optics Letters, 35(24), 4109-4111. https://doi.org/10.1364/OL.35.004109