Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films

Yu Jen Huang, Min Chuan Tsai, Chiung Hsin Wang, Tsung-Eong Hsien*

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Phase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 °C by cerium (Ce) doping (up to 8.6 at.%) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping.

Original languageEnglish
Pages (from-to)3692-3696
Number of pages5
JournalThin Solid Films
Volume520
Issue number9
DOIs
StatePublished - 29 Feb 2012

Keywords

  • Cerium
  • Doping
  • Electrical properties
  • Germanium antimony telluride
  • Phase-change memory

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