CHARACTERIZATION OF VERY THIN GATE-OXIDE MOS DEVICES.

M. S. Liang*, J. Y. Choi, P. K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

Electrical characteristics of thermal silicon dioxides with thickness in the range of 30-450 angstrom have been investigated using MOS capacitors and transistors. The general properties of thin gate-oxide FETs, including subthreshold swings, channel mobilities, and linear transconductances, have been examined. A simple model based on a critical electron energy for trap generation and electron scattering inside the dielectric film is proposed to explain the thickness dependence of bulk and interface charge trapping under high field/current stress in thin oxides.

Original languageEnglish
Pages (from-to)153-157
Number of pages5
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1984

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