A new oxide trap characterization technique by employing a two-phase subthreshold current measurement has been developed. By varying the gate bias and the drain bias in measurement, the field and temperature dependences of oxide charge detrapping and the spatial distributions of various stress induced oxide traps are characterized.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|State||Published - 1 Dec 1997|
|Event||1997 International Electron Devices Meeting - Washington, DC, USA|
Duration: 7 Dec 1997 → 10 Dec 1997