Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current technique

Ta-Hui Wang*, L. P. Chiang, N. K. Zous, T. E. Chang, C. Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

A new oxide trap characterization technique by employing a two-phase subthreshold current measurement has been developed. By varying the gate bias and the drain bias in measurement, the field and temperature dependences of oxide charge detrapping and the spatial distributions of various stress induced oxide traps are characterized.

Original languageEnglish
Pages (from-to)89-92
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 1 Dec 1997
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: 7 Dec 199710 Dec 1997

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