Characterization of ultra-thin Ni silicide film by two-step low temperature microwave anneal

Chien Ting Wu, Yao Jen Lee, Fu Kuo Hsueh, Po Jung Sung, Ta Chun Cho, Michael Ira Current, Tien-Sheng Chao

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A novel silicide process with two-step low temperature microwave annealing (MWA) achieves NiSi thickness of 10 nm while maintaining low resistance, and an ultra-thin Ni silicide film, only 4.5 nm, has been realized. In this MWA system, we insert quartz and Si susceptors to change the absorption efficiency of the process wafer and provide fine turning in temperature control during annealing. The thickness of NiSi film is determined by microwave power and by changing the number and the position of quartz and Si susceptors in the first step of the anneal process. The STEM-HAADF combined EELS/EDS spectroscopies are used to analyze the electronic excitations and identify the phase of Ni silicide.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume3
Issue number5
DOIs
StatePublished - 1 Jan 2014

Fingerprint Dive into the research topics of 'Characterization of ultra-thin Ni silicide film by two-step low temperature microwave anneal'. Together they form a unique fingerprint.

  • Cite this