Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Pucheng Liu, Kuniyuki Kakushima, Hiroshi Iwai, Akira Nakajima, Toshiharu Makino, Masahiro Ogura, Shinichi Nishizawa, Hiromichi Ohashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al 0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.

Original languageEnglish
Title of host publication1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
Pages155-158
Number of pages4
DOIs
StatePublished - 2013
Event1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Columbus, OH, United States
Duration: 27 Oct 201329 Oct 2013

Publication series

Name1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings

Conference

Conference1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013
CountryUnited States
CityColumbus, OH
Period27/10/1329/10/13

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