Characterization of TiN film grown by low-pressure-chemical-vapor-deposition

Y. J. Mei*, T. C. Chang, J. C. Hu, L. J. Chen, Y. L. Yang, Fu-Ming Pan, W. F. Wu, A. Ting, C. Y. Chang

*Corresponding author for this work

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21 Scopus citations


Conformal TiN films were deposited by thermal low-pressure-chemical-vapor-deposition (LPCVD) in a rotating disk reactor, using TiCl 4 and NH 3 with N 2 as a dilution gas. TiN plug with 0.05 μm contact size was achieved. No void formation was observed in the TiN plug. The result demonstrated that LPCVD-TiN can be used to fill very small contact holes. The excellent step coverage and uniformity resulted from a surface-reaction-rate-limited deposition. The resistivity of TiN film was reduced to 133 μΩcm by in-situ NH 3 plasma post-treatment. The concentration of chlorine in the TiN film was measured to be less than 2 atomic % (at.%) by Auger electron spectroscope measurement. For Al deposited on TiN, the Al orientation was found to be dependent on the deposition method of Al film, but not on the underlying TiN orientation.

Original languageEnglish
Pages (from-to)594-598
Number of pages5
JournalThin Solid Films
Issue number1-4
StatePublished - 31 Oct 1997


  • Low-pressure-chemical-vapour-deposition
  • TiN film

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