Characterization of thin ZrO2 films deposited using Zr(Oi-Pr)2(thd)2 and O2 on Si(100)

H. W. Chen*, D. Landheer, X. Wu, S. Moisa, G. I. Sproule, Tien-Sheng Chao, T. Y. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

Thin stoichiometric carbon-free ZrO2 films were deposited on Si(100) using the novel precursor Zr(Oi-Pr)2(thd)2 dissolved in octane. XPS and HRTEM analysis showed that a Zr silicate layer is formed at the interface during deposition.

Original languageEnglish
Pages (from-to)1145-1148
Number of pages4
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Issue number3
DOIs
StatePublished - 1 May 2002

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