Characterization of thin oxide damage during aluminum etching and photoresist ashing processes

H. Shin, C. C. King, R. Moazzami, T. Horiuchi, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Plasma-induced damage can be simulated and modeled as damage produced by constant voltage electrical stress. The voltage produced by plasma process increases with the "antenna" size of the device structure. Photoresist ashing is capable of degrading oxide integrity even more rapidly than Al etching. However, the stress voltage produced during ashing exhibits a large spread and is randomly distributed across the wafer. CV measurement is shown to be a more sensitive technique for characterizing plasma-etching induced damage than oxide breakdown.

Original languageEnglish
Title of host publication1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages210-213
Number of pages4
ISBN (Electronic)078030036X, 9780780300361
DOIs
StatePublished - 1 Jan 1991
Event1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan
Duration: 22 May 199124 May 1991

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
CountryTaiwan
CityTaipei
Period22/05/9124/05/91

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