Characterization of thermal plasma CVD diamond coatings and the intermediate SiC phase

Chuen-Tinn Tsai, W. Gerberich, Z. P. Lu, J. Heberlein, E. Pfender

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Diamond films have been successfully deposited by DC thermal plasma jet CVD at a rate of 40 µm/h under atmospheric and subatmospheric pressures. Transmission electron microscopy (TEM) has been used for the characterization of the diamond films and the intermediate phase. The orientation and the distribution of β-SiC at the interface between the diamond and silicon substrate have been observed using selected-area electron diffraction with the associated dark-field images. X-ray diffraction, scanning electron microscopy, and Raman spectroscopy are used for the characterization of the produced diamond films. Potential applications of selected-area channeling patterns are discussed for investigating the correlations between the growth direction and the crystalline perfection.

Original languageEnglish
Pages (from-to)2127-2133
Number of pages7
JournalJournal of Materials Research
Volume6
Issue number10
DOIs
StatePublished - 1 Jan 1991

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